1SS351

S MD Type Sillicon Epitaxial Schottky Barrier Diode 1SS351 Diodes SOT-23 Unit: mm Series connection of 2 elements in a small-sized package facilitates +0.1 2.4-0.1 high-density mounting and permits 1SS351-applied equipment to be made smaller. Small interterminal capacitance (C=0.69pF typ). Small forward voltage (VF=0.23V max). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R everse V oltage F orward C urrent Junction T em perature S torage tem perature S ym bol VR IF Tj T stg V alue 5 30 125 -55 to +125 U nit V mA Electrical Characteristics Ta = 25 Parameter Forward Voltage Forward Current Reverse Current Interterminal Capacitance Symbol VF IF IR C Conditions I F = 1 mA V F = 0.5 V V R = 0.5 V V R = 0.2 V, f = 1 MHz 0.69 30 25 0.9 Min Typ Max 0.23 Unit V mA A pF Marking Marking CH +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1