1SS370

S MD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Diodes Unit: mm Features Low forward voltage :VF(3) = 0.9 V(Typ) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Fast reverse recovery time Small total capacitance :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM P Tj Tstg Rating 250 200 100 300 2 100 125 -55 + 125 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF(1) VF(2) Reverse current Total capacitance Reverse recovery time IR(1) IR(2) CT trr Test Conditions IF = 10 mA IF = 100 mA VR = 50 V VR = 200 V VR = 0, f = 1.0 MHz IF = 10 mA 1.5 10 Min Typ 0.72 0.90 Max 1.0 1.2 0.1 1.0 3.0 60 A pF ns Unit V Marking Marking F5 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1