1SS379

S MD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Diodes Unit: mm Low forward voltage :VF=1.0V(Typ.) +0.1 2.4-0.1 Low reverse current: IR=0.1nA(Typ.) Small total capacitance: CT=3.0pF (Typ.) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current * Maximum (peak) forward current * Surge current (10 ms) * Power dissipation Junction Temperature Storage Temperature * Unit Rating. Total Rating=Unit Rating X0.7 Symbol VRM VR IO IFM IFSM P Tj Tstg Rating 85 80 100 300 2 150 125 -55 + 125 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Total capacitance Symbol VF(1) IR CT Test Conditions IF = 100mA VR = 80V VR = 0, f = 1.0 MHz Min Typ 1.0 0.1 3.0 Max 1.3 10 6.0 Unit V A pF Marking Marking P9 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1