1SS400

Diodes SMD Type Switching Diodes 1SS400 +0.05 0.3 -0.05 SOD-523 +0.1 1.2 -0.1 +0.05 0.8 -0.05 ■ Features ● Fast Switching Speed ● High reliability + +0.1 0.6 -0.1 - 1 +0.1 1.6 -0.1 0.07max +0.05 0.1 -0.02 0.77max 2 Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Reverse voltage (Repetitive) Parameter VRM 90 Reverse voltage (DC) VR 80 Average rectified forward current IO 100 Forward voltage (Repetitive Peak) IFM 225 Isurge 500 Surge Current(t=1s) Junction Temperature Storage Temperature range TJ 125 Tstg -55 to 125 Unit V mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA Forward voltage VF IF= 100 mA 1.2 Reverse voltage leakage current IR VR= 80 V 0.1 uA Junction capacitance Cj VR= 0.5 V, f= 1 MHz 3 pF Reverse recovery time trr VR=6V,IF=10mA, RL=100Ω 4 ns 90 V ■ Marking Marking A* www.kexin.com.cn 1 Diodes SMD Type Switching Diodes 1SS400 ■ Typical Characterisitics Ta=75℃ Ta=125℃ 10 Ta=25℃ 1 Ta=－25℃ 0.1 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=－25℃ 1 0 20 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS 0 120 940 930 920 80 AVE:930.3mV 910 5 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1 Ta=25℃ VR=80V n=30pcs 60 40 AVE:12.47nA 20 15 Ta=25℃ VR=0.5V f=1MHz n=10pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT : IR(nA) 0.8 0.7 0.6 AVE:0.698pF 0.5 0.4 0.3 0.2 0.1 900 0 0 VF DISPERSION MAP IR DISPERSION MAP 20 Ct DISPERSION MAP 100 1cyc 15 8.3ms 10 AVE:4.05A 5 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs 4 3 2 AVE:1.20ns 1 10 1 8.3m 8.3m 0 0.1 1 IFSM DISPERSION MAP trr DISPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 1 t 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.kexin.com.cn 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IF=10mA IM=1mA 10 1ms time 300us 9 7 6 5 4 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 AVE:1.58kV 3 2 0 0.01 AVE:6.43kV 8 1 1 0.001 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 100 Ifsm Ifsm 1cyc 0 0.1 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm REVERSE RECOVERY TIME:trr(ns) 5 ELECTROSTATIC DISCHARGE TEST ESD(KV) FORWARD VOLTAGE : V F(mV) 40 60 80 100 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 100 950 PEAK SURGE FORWARD CURRENT : I FSM(A) 1 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 PEAK SURGE FORWARD CURRENT : I FSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 0.01 2 f=1MHz Ta=125℃ REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) 10 100000 100 C=200pF R=0Ω C=100pF R=1.5kΩ 1000 ESD DISPERSION MAP 100