1SV215

S MD Type Silicon Epitaxial Planar Diode 1SV215 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C2V/C25V=10.5(Typ.) Low Series Resistance:rs=0.6 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics,and Small Tracking Error. Useful for Small Size Tuner. Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR V RM Tj T stg Value 30 35 (R L =10K 125 -55 to +125 ) Unit V V Electrical C haracteristics T a = 25 P aram eter R everse V oltage R everse C urrent C apacitance C apacitance R atio S eries R esistance N ote : A vailable in m atched group for capacitance to 2.5% . C (M ax.)-C (M in.) C (M in.) (V R =2~25V ) S ym bol VR IR C 2V C 25V C 2V /C 25V rs V R = 5V , f = 470 M H z C onditions IR = 1 A M in 30 10 26 2.5 9.5 10.5 0.6 0.8 32 3.2 Typ M ax U nit V nA pF V R = 28 V f = 1 M H z;V R = 2 V f = 1 M H z;V R = 25 V 0.025 Marking Marking T2 +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1