1SV245

S MD Type Silicon Epitaxial Planar Diode 1SV245 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C2V/C25V = 5.7(Typ.) Low Series Resistance:rs = 1.2 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 Excellent C-V Characteristics,and Small Tracking Error. Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR V RM Tj T stg Value 30 35(R L = 10 K 125 -55 to +125 ) Unit V V Electrical C haracteristics T a = 25 P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance Note : Unites are com pounded in one package and are m athed to 6.0% C(M ax.)-C(M in.) C(M in.) (V R =2~25V ) 0.06 S ym bol VR IR C 2V C 25V C 2V /C 25V rs V R = 1V , f = 470 M Hz Conditions IR = 1 A M in 30 10 3.31 0.61 5 5.7 1.2 4.55 0.77 6.5 2.0 Typ M ax Unit V nA pF V R = 28 V f = 1 M Hz;V R = 2 V f = 1 M Hz;V R = 25 V Marking Marking T3 +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1