1SV262

S MD Type Silicon Epitaxial Planar Diode 1SV262 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C2V/C25V = 8(Typ.) Low Series Resistance:rs = 0.6 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics,and Small Tracking Error. Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR V RM Tj T stg Value 34 36(R L = 10 K 125 -55 to +125 ) Unit V V Electrical C haracteristics T a = 25 P aram eter R everse V oltage R everse C urrent C apacitance S ym bol VR IR C 2V C 25V C apacitance R atio S eries R esistance N ote : A vailable in m atched group for capacitance to 2.0% . C (M ax.)-C (M in.) C (M in.) (V R =2~25V ) 0.020 C 2V /C 25V C 25V /C 28V rs V R = 5V , f = 470 M H z C onditions IR = 1 A M in 34 10 33 2.6 12 1.03 0.6 0.8 35.5 2.85 12.5 38 3.0 Typ M ax U nit V nA pF V R = 32 V f = 1 M H z;V R = 2 V f = 1 M H z;V R = 25 V Marking Marking TD +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1