1SV270

S MD Type Silicon Epitaxial Planar Diode 1SV270 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj T stg Value 10 125 -55 to +125 Unit V Electrical C haracteristics T a = 25 P aram eter R everse V oltage R everse C urrent C apacitance C apacitance R atio S eries R esistance S ym bol VR IR C 1V C 4V C 1V /C 4V rs V R = 1V , f = 470 M H z C onditions IR = 1 A M in 10 3 15 7.8 1.3 16 8 2 0.28 0.5 17 8.7 Typ M ax U nit V nA pF V R = 10 V f = 1 M H z;V R = 1 V f = 1 M H z;V R = 4 V Marking Marking TF +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1