1SV276

S MD Type Silicon Epitaxial Planar Diode 1SV276 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj T stg Value 10 125 -55 to +125 Unit V Electrical C haracteristics T a = 25 P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance S ym bol VR IR C 1V C 4V C 1V /C 4V rs V R = 1V , f = 470 M Hz Conditions IR = 1 A M in 10 3 15 7 1.8 16 8 2.0 0.22 0.4 17 8.5 Typ M ax Unit V nA pF V R = 10 V f = 1 M Hz;V R = 1 V f = 1 M Hz;V R = 4 V Marking Marking TL +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1