1SV288

S MD Type Silicon Epitaxial Planar Diode 1SV288 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C2V/C25V = 16(Typ.) Low Series Resistance:rs = 0.92 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics,and Small Tracking Error. Useful for small size Tuner. Absolute Maxim um Ratings Ta = 25 Param eter Reverse Voltage Peak Reverse Voltage Junction Tem perature Storage Tem perature Range Sym bol VR V RM Tj T stg Value 30 35(R L = 10 K 125 -55 to +125 ) Unit V V Electrical C haracteristics T a = 25 P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance Note : A vailable in m atched group for capacitance to 2.5% . C(M ax.)-C(M in.) C(M in.) (V R =2~25V ) 0.025 S ym bol VR IR C 2V C 25V C 2V /C 25V rs V R = 5V , f = 470 M Hz Conditions IR = 1 A M in 30 10 41 2.5 15 16 0.92 1.05 49.5 3.2 Typ M ax Unit V nA pF V R = 28 V f = 1 M Hz;V R = 2 V f = 1 M Hz;V R = 25 V Marking Marking TJ +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1