1SV302

S MD Type Silicon Epitaxial Planar Diode 1SV302 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C2V/C25V=17.5(Typ.) Low Series Resistance:rs=1.05 Useful for Small Size Tuner (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR V RM Tj T stg Value 30 35(R L = 10K 125 -55 to +125 ) Unit V V Electrical C haracteristics T a = 25 P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance Note : A vailable in m atched group for capacitance to 2.5% . C(M ax.)-C(M in.) C(M in.) (V R =2~25V ) S ym bol VR IR C 2V C 25V C 2V /C 25V rs V R = 5V , f = 470 M Hz Conditions IR = 1 A M in 30 10 42 2.1 17 47 2.6 17.5 1.05 1.25 51 3.1 Typ M ax Unit V nA pF V R = 28 V f = 1 M Hz;V R = 2 V f = 1 M Hz;V R = 25 V 0.025 Marking Marking TT +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1