S MD Type
Silicon Epitaxial Planar Diode 1SV304
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
+0.05 0.3-0.05
+0.05 0.85-0.05
Features
High Capacitance Ratio:C1V/C4V=3.0(Typ.) Low Series Resistance:rs=0.27 (Typ.)
0.475 0.375
+0.1 2.6-0.1
1.0max
Absolute Maxim um Ratings Ta = 25
Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj T stg Value 10 125 -55 to +125 Unit V
Electrical C haracteristics T a = 25
P aram eter Reverse V oltage Reverse Current Capacitance Capacitance Ratio S eries Resistance S ym bol VR IR C 1V C 4V C 1V /C 4V rs V R = 1V , f = 470 M Hz Conditions IR = 1 A M in 10 3 17.3 5.3 2.8 18.3 6.1 3 0.27 0.32 19.3 6.6 Typ M ax Unit V nA pF
V R = 10 V f = 1 M Hz;V R = 1 V f = 1 M Hz;V R = 4 V
Marking
Marking TV
+0.05 0.1-0.02
+0.1 1.3-0.1
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