1SV313

S MD Type Silicon Epitaxial Planar Diode 1SV313 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C0.5V/C0.25V=2.1(Typ.) Low Series Resistance:rs=0.35 Useful for Small Size Tuner (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj T stg Value 10 125 -55 to +125 Unit V Electrical Characteristics Ta = 25 Param eter Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance Sym bol VR IR C 0.5V C 0.25V C 0.5V /C 0.25V rs V R = 1V, f = 470 MHz Conditions IR = 1 A Min 10 3 7.3 2.75 2.4 2.5 0.35 8.4 3.4 Typ Max Unit V nA pF V R = 10 V f = 1 MHz;V R = 0.5 V f = 1 MHz;V R = 0.25 V Marking Marking V6 +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1