1SV322

S MD Type Silicon Epitaxial Planar Diode 1SV322 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio:C1V/C4V=4.3(Typ.) Low Series Resistance:rs=0.4 Useful for Small Size Tuner (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR Tj T stg Value 10 125 -55 to +125 Unit V Electrical Characteristics Ta = 25 Param eter Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance Note 1.Signal level when capacitance is m easured:Vsig = 500m Vrm s Sym bol VR IR C 1V C 4V C 1 /C 4V rs V R = 4V, f = 470 MHz Conditions IR = 1 A Min 10 3 26.5 6 4 4.3 0.4 0.8 29.5 7.1 Typ Max Unit V nA pF V R = 10 V f = 1 MHz;V R = 1 V f = 1 MHz;V R = 4 V Marking Marking V7 +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1