SMD Type
MOSFET
N-Channel MOSFET
2KK5016
SOT-523
U n it: m m
+0.1
1.6 -0.
1
+0.1
1.0 -0.1
+0.05
0.2 -0.05
0.15±0.05
+0.15
1.6-0.
15
1
ƽ Rdson = 1.5വ@Vgs=4.5V (Typ.)
ƽ Low Gate Charge for Fast Switching
3
ƽ ESD Protected Gate
0.8±0.1
2
ƽ ID = 238 mA
0.55 (REF.)
ƽ VDS = 20 V
0.36±0.1
Ƶ Features
0.3±0.05
+0.1
0.5 -0.1
+0.1
0.8-0.
1
+0.05
0.75-0.
05
1. Gate
2. Source
3. Drain
Ƶ Absolute Maximum Ratings (TA = 25ć)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
Continuous Drain Current (Note 1)
Steady State = 25ć
ID
238
Pulsed Drain Current
tP İ10μs
IDM
714
Power Dissipation (Note 1)
Steady State = 25ć
Unit
V
mA
PD
300
W
RșJA
416
ഒ/W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
Thermal Resistance, Junction- to-Ambient (Note 1)
ć
Note 1: Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
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1
SMD Type
MOSFET
N-Channel MOSFET
2KK5016
Ƶ Electrical Characteristics (TA = 25ć, unless otherwise specified)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
VDSS
ID=100ȝA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
ȝA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±10V
±100
μA
Gate Threshold Voltage
VGS(th)
VDS=3V , ID=100ȝA
1.5
V
Static Drain-Source On-Resistance
RDS(On)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
20
V
0.5
VGS=4.5V, ID=10mA
1.5
3.0
VGS=2.5V, ID=10mA
2.0
3.5
VDS=3V,ID=10mA
80
20
10
15
Crss
3.5
6.0
Turn-On DelayTime
td(on)
13
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Diode Forward Voltage
VGS=0V, VDS=5V, f=1MHz
VGS = 4.5 V, VDS = 5 V,
ID = 10mA, RG = 10 ಳ
tf
VSD
pF
15
ns
98
60
ISD=10mA,VGS=0V
Note 2: Pulse Test: pulse width İ300 μs, duty cycleİ 2%.
Note 3: Switching characteristics are independent of operating junction temperatures.
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ȍ
mS
11.5
Turn-Off Fall Time
2
Min
Drain-Source Breakdown Voltage
0.66
0.80
V
SMD Type
MOSFET
N-Channel MOSFET
2KK5016
Ƶ Typical Characteristics
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3
SMD Type
MOSFET
N-Channel MOSFET
2KK5016
4
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