2N7002

MOSFET SMD Type N-Channel Enhancement MOSFET 2N7002 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features Voltage controlled small signal switch +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 High density cell design for low RDS(ON) 1 High saturation current capability 0.55 Rugged and reliable 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit VDS 60 V Drain Current ID 115 mA mW Drain-Source voltage Power Dissipation PD 225 Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage VDSS VGS=0 V, ID=10 0 μA Zero gate voltage drain current IDSS VDS=60 V, VGS=0 V Gate-body leakage lGSS VDS=0 V, VGS= 25 V Gate-threshold voltage VGS(th) Drain-source on-resistance On-state drain current rDS(0n) ID(on) Forward tran conductance Input capacitance gts Testcondit ions VDS=VGS, ID=250 μA Min COSS Reverse transfer capacitance CrSS Turn-on Time td(0n) Turn-off Time td(off) Drain-source on-voltage VDS(on) VSD Unit 80 nA V 80 1 2.5 VGS=10 V, ID=500 mA 7.5 VGS=5 V, ID=50 mA 7.5 nA V VGS=10 V, VDS=7 V 500 mA VDS=10 V, ID=200 mA 80 ms 50 VDS=25 V, VGS=0 V, f=1 MHz 25 pF 5 VDD=25 V, RL=50 ID=500 mA,VGEN=10 V RG=25 20 ns 40 VGS=10V, ID =500mA VGS=5V, ID =50mA Diode forward voltage Max 60 Ciss Output capacitance Typ IS=115 mA, VGS=0 V 0.55 3.75 V 0.375 V 1.2 V Marking Marking 702. www.kexin.com.cn 1 MOSFET SMD Type N-Channel Enhancement MOSFET 2N7002 Ƶ Typical Characterisitics Transfer Characteristics Output Characteristics 1.0 1.0 V GS =10V,9V,8V,7V,6V,5V T a =25 ć T a =25 ć Pulsed Pulsed 0.8 V GS =4V 0.4 0.2 I 0.6 0.6 DRAIN CURRENT DRAIN CURRENT I D D (A) (A) 0.8 0.4 0.2 V GS =3V V GS =2V 0.0 0 1 2 3 DRAIN TO SOURCE 4 VOLTAGE V 0.0 0 5 2 4 GATE TO SOURCE VOLTAGE (V) DS RDS(ON) —— ID N RDS(ON) —— 8 V GS 10 (V) VGS 6 T a =25 ć Pulsed Pulsed :() T a =25 ć DS(ON) 6 4 ID =500mA R R DS(ON) :() 8 6 V GS =5V ON-RESISTANCE ON-RESISTANCE 4 V GS =10V 2 0 0.0 0 0.2 0.4 0.6 DRAIN CURRENT I 0.8 1.0 IS —— VSD T a =25 ć 0.3 SOURCE CURRENT I S (A) Pulsed 0.1 0.03 0.4 SOURCE TO DRAIN 2 www.kexin.com.cn 0.8 VOLTAGE 1.2 V SD 0 6 GATE TO SOURCE VOLTAGE (A) D 1 0.01 0.0 ID =50mA 2 1.6 (V) 12 V 18 GS (V)