2N7002E

S MD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002E SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage +0.1 1.3-0.1 Low On-Resistance: RDS(ON) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Drain-Gate Voltage RGS 1.0 m Symbol VDSS VDGR VGSS ID PD R JA Rating 60 60 20 40 240 300 417 -55 to +150 Unit V V V mA mW W Gate-Source Voltage -Continuous Pulsed Drain Current -Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Tj, TSTG Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25 @ TC = 125 Gate-Body Leakage Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) VDD = 30V, ID = 0.2A,RL = 150 = 10V,RGEN = 25 ,VGEN VDS = 25V, VGS = 0V,f = 1.0MHz VGS = 15V, VDS = 0V 1.0 1.6 2.0 0.8 80 22 11 2.0 7.0 11 50 25 5.0 20 20 1.0 Symbol VDSS IDSS Testconditons VGS = 0V, ID = 10 A Min 60 Typ 70 1.0 500 10 2.5 3 4 A mS pF pF pF ns ns nA V Max Unit V A VDS = 60V, VGS = 0V VDS = VGS, ID = 250mA VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Marking Marking K7B +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1