2N7002K

S MD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage +0.1 1.3-0.1 Low On-Resistance: RDS(ON) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range PD R JA Symbol VDSS VGSS ID Rating 60 20 300 800 350 357 -65 to +150 Unit V V mA mA mW W Tj, TSTG Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss VDS = 25V, VGS = 0V,f = 1.0MHz Testconditons VGS = 0V, ID = 10 A Min 60 1.0 10 1.0 1.6 2.5 2.0 3.0 80 50 25 5.0 ms pF pF pF Typ Max Unit V A A V VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VGS = 10V, VDS = 0.2V Marking Marking K7K +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1