2N7002T

MOSFET SMD Type N-Channel MOSFET 2N7002T SOT-523 U n it: m m +0.1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 1 ● ID = 115mA 0.36±0.1 +0.15 1.6-0. 15 ● VDS (V) = 60V 3 ● RDS(ON) ＜ 5Ω (VGS = 10V) 0.8±0.1 2 0.55 (REF.) ■ Features 0.15±0.05 0.3±0.05 ● RDS(ON) ＜ 7Ω (VGS = 5V) +0.1 0.5 -0.1 +0.1 0.8-0. 1 +0.05 0.75-0. 05 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25℃ ■ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 115 mA Power Dissipation PD 150 mW RthJA 833 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V IGSS VDS=0V, VGS=±20V Gate-Body Leakage Current Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(On) On State Drain Current Forward Transconductance VDS=VGS , ID=250μA Min Typ Max 60 1 Unit V 80 nA ±80 nA 2.5 V VGS=10V, ID=500mA 5 VGS=5V, ID=50mA 7 Ω ID(ON) VGS=10V, VDS=7V 500 mA gFS VDS=10V, ID=0.2A 80 mS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On DelayTime td(on) Turn-Off DelayTime td(off) Drain-source on-voltage VDS(on) Diode Forward Voltage VSD 50 VGS=0V, VDS=25V, f=1MHz 25 pF 5 20 VDD = 25V, ID = 0.5A, VGEN= 10V RL = 50Ω, RGEN = 25Ω 40 VGS=10V, ID=500mA 3.75 VGS=5V, ID=50mA Is=115mA, VGS=0 V ns 0.375 0.55 V 1.2 ■ Marking Marking K72 www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET 2N7002T ■ Typical Characterisitics Transfer Characteristics Output Characteristics 1.0 1.4 T a =25 ℃ V GS =10V,9V,8V,7V,6V Ta =25 ℃ V GS =5V Pulsed 1.2 Pulsed (A) ID 0.8 DRAIN CURRENT DRAIN CURRENT ID (A) 0.8 1.0 V GS =4V 0.6 0.4 0.6 0.4 0.2 V GS =3V 0.2 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0.0 5 0 RDS(ON) —— ID RDS(ON) —— 3 VGS Pulsed (Ω) T a =25 ℃ (Ω) RDS(ON) ON-RESISTANCE RDS(ON) ON-RESISTANCE (V) Pulsed 1 V GS =10V 0.2 0.4 0.6 0.8 ID 1.0 IS —— VSD T a =25 ℃ 1 Pulsed 0.3 0.1 0.03 0.01 3E-3 1E-3 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.kexin.com.cn VSD (V) 4 ID =500m A 2 ID =50m A 0 0 6 GATE TO SOURCE VOLTAGE (A) 2 IS (A) 6 VGS T a =25 ℃ V GS =5V DRAIN CURRENT SOURCE CURRENT 4 6 2 0 0.0 2 2 GATE TO SOURCE VOLTAGE (V) 1.2 1.4 12 VGS 18 (V)