2PA1576Q

SMD S MD Type PNP General Purpose Transistor 2PA1576 Transistors IC Features Low current (max. 100 mA) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 pF). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -50 -40 -5 -100 -200 -200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PA1576Q 2PA1576R 2PA1576S Collector-emitter saturation voltage Collector capacitance Transition frequency * Pulse test: tp 300 ìs; ä 0.02. Symbol ICBO IEBO Testconditons IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 IC = 0; VEB = -4 V 120 180 270 Min Typ Max -100 -5 -100 270 390 560 -500 2.5 100 3.5 mV pF MHz Unit nA ìA nA hFE IC = -1 mA; VCE = -6 V VCE(sat) IC = -50 mA; IB = -5 mA; * Cc fT IE = ie = 0; VCB = -12 V; f = 1 MHz IC = -2 mA; VCE = -12 V; f = 100 MHz hFE Classification TYPE Marking 2PA1576Q FQ 2PA1576R FR 2PA1576S FS www.kexin.com.cn 1