2PB709A

SMD S MD Type PNP General Purpose Transistor 2PB709A Transistors IC SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 Low current (max. 100 mA) +0.1 2.4-0.1 Low voltage (max. 45 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation(Tamb Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Transistor mounted on an FR4 PCB. 25 ; *) Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -45 -45 -6 -100 -200 -100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2PB709A Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PB709AQ 2PB709AR 2PB709AS Collector-emitter saturation voltage Collector capacitance Transition frequency 2PB709AQ 2PB709AR 2PB709AS * Pulse test: tp 300 ìs; ä 0.02. fT IC = -1 mA; VCE = -10 V; f = 100 MHz VCE(sat) IC = -100 mA; IB = -10 mA * Cc IE = ie = 0; VCB = -10 V; f = 1 MHz 60 70 80 hFE IC = -2 mA; VCE = -10 V Symbol ICBO IEBO Testconditons IE = 0; VCB = -45 V IE Transistors IC Min Max -10 -5 -10 Unit nA ìA nA = 0; VCB = -45 V; Tj = 150 IC = 0; VEB = -5 V 160 210 290 260 340 460 -500 5 mV pF MHz hFE Classification TYPE Marking 2PB709AQ BQ 2PB709AR BR 2PB709AS BS 2 www.kexin.com.cn