2PB709AQW

SMD S MD Type PNP General Purpose Transistor 2PB709AW Transistors IC Features High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Rth j-a Rating -45 -45 -6 -100 -200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Symbol ICBO Testconditons IE = 0; VCB = -45 V IE = 0; VCB = -45 V; Tj = 150 Emitter cut-off current DC current gain 2PB709AQW 2PB709ARW 2PB709ASW Collector-emitter saturation voltage Collector capacitance Transition frequency 2PB709AQW 2PB709ARW 2PB709ASW * Pulse test: tp 300 ìs; ä 0.02. IEBO IC = 0; VEB = -5 V 160 210 290 260 340 460 -500 5 60 70 80 mV pF Min Typ Max -10 -5 -10 Unit nA ìA nA hFE IC = -2 mA; VCE = -10 V VCE(sat) IC = -100 mA; IB = -10 mA; * Cc IE = ie = 0; VCB = -10 V; f = 1 MHz fT IC = -1 mA; VCE = -10 V;f = 100 MHz MHz hFE Classification TYPE Marking 2PB709AQW N5 2PB709ARW 2PB709ASW N7 N9 www.kexin.com.cn 1