2PB710A

SMD S MD Type PNP General Purpose Transistor 2PB710A Transistors IC SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 High current (max. 500 mA) +0.1 2.4-0.1 Low voltage (max. 50 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Tamb 25 ; * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -60 -50 -5 -500 -1 -200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2PB710A Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PB710AQ 2PB710AR 2PB710AS DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency 2PB710AQ 2PB710AR 2PB710AS *. Pulse test: tp 300 ìs; ä 0.02. fT IC = -50 mA; VCE = -10 V; f = 100 MHz* VCEsat VBEsat Cc IC = -500 mA; VCE = -10 V; * IC = -300 mA; IB = -30 mA * IC = -300 mA; IB = -30 mA * IE = ie = 0; VCB = -10 V; f = 1 MHz hFE IC = -150 mA; VCE = -10 V* Symbol ICBO IEBO Testconditons IE = 0; VCB = -60 V IE Transistors IC Min Typ Max -10 -5 -10 Unit nA ìA nA = 0; VCB = -60 V; Tj = 150 IC = 0; VEB = -5 V 85 120 170 40 170 240 340 -600 -1.5 15 100 120 140 mV V pF MHz Marking Type Number Marking 2PB710AQ DQ 2PB710AR DR 2PB710AS DS 2 www.kexin.com.cn