S MD Type
NPN General Purpose Transistor 2PC4081
Transistors
Features
High current (max. 100 mA) Low voltage (max. 40 V)
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 50 40 5 100 200 200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Symbol ICBO Testconditons IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 Emitter cut-off current DC current gain 2PC4081Q 2PC4081R 2PC4081S Collector-emitter saturation voltage Collector capacitance Transition frequency * Pulse test: tp 300 ìs; ä 0.02. IEBO IC = 0; VEB = 4 V 120 180 270 Min Typ Max 100 5 100 270 390 560 400 2 100 3.5 mV pF MHz Unit nA ìA nA
hFE
IC = 1 mA; VCE = 6 V
VCE(sat) IC = 50 mA; IB = 5 mA; * Cc fT IE = ie = 0; VCB = 12 V; f = 1 MHz IC = 2 mA; VCE = 12 V; f = 100 MHz
hFE Classification
TYPE Marking 2PC4081Q ZQ 2PC4081R ZR 2PC4081S ZS
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