2PD1820AR

SMD S MD Type NPN General Purpose Transistor 2PD1820A Transistors IC Features High current (max. 500 mA). Low voltage (max. 50 V). Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 5 500 1 200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Symbol ICBO Testconditons IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 Emitter cut-off current DC current gain 2PD1820AQ 2PD1820AR 2PD1820AS Collector-emitter saturation voltage Collector capacitance Transition frequency * Pulse test: tp 300 ìs; ä 0.02. IEBO IC = 0; VEB = 4 V 85 120 170 Min Typ Max 10 5 10 170 240 340 600 15 150 mV pF MHz Unit nA ìA nA hFE IC = 150 mA; VCE = 10 V; * VCE(sat) IC = 300 mA; IB = 30 mA; * Cc fT IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz;* hFE Classification TYPE Marking 2PD1820AQ AQ 2PD1820AR AR 2PD1820AS AS www.kexin.com.cn 1