2PD601AQ

SMD S MD Type NPN General Purpose Transistor 2PD601A Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Low voltage (max. 50 V). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Low current (max. 100 mA) 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Tamb 25 ; * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 6 100 200 100 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2PD601A Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PD601AQ 2PD601AR 2PD601AS DC current gain Collector-emitter saturation voltage Collector capacitance Transition frequency 2PD601AQ 2PD601AR 2PD601AS * Pulse test: tp 300 ìs; ä 0.02. fT IC = 2 mA; VCE = 10 V; f = 100 MHz * hFE VCEsat Cc IC = 100 mA; VCE = 2 V; IC = 100 mA; IB = 10 mA; * IE = ie = 0; VCB = 10 V; f = 1 MHz 100 120 140 hFE IC = 2 mA; VCE = 10 V; * Symbol ICBO IEBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 IC = 0; VEB = 5 V 160 210 290 90 Min Transistors IC Typ Max 10 5 10 260 340 460 Unit nA ìA nA 500 3.5 mV pF MHz Marking Type Number Marking 2PD601AQ ZQ 2PD601AR ZR 2PD601AS ZS 2 www.kexin.com.cn