2PD602AQ

SMD S MD Type NPN General Purpose Transistor 2PD602A Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low voltage (max. 50 V). 0.55 High current (max. 500 mA) +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Tamb 25 ; * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 5 500 1 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA A mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2PD602A Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PD602AQ 2PD602AR 2PD602AS DC current gain Collector-emitter saturation voltage Collector capacitance Transition frequency 2PD602AQ 2PD602AR 2PD602AS * Pulse test: tp 300 ìs; ä 0.02. fT IC = 50 mA; VCE = 10 V; f = 100 MHz * hFE VCEsat Cc IC = 500 mA; VCE = 10 V; * IC = 300 mA; IB = 30 mA; * IE = ie = 0; VCB = 10 V; f = 1 MHz hFE IC = 150 mA; VCE = 10 V; * Symbol ICBO IEBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 IC = 0; VEB = 4 V Transistors IC Min Max 10 5 10 Unit nA ìA nA 85 120 170 170 240 340 600 15 140 160 180 mV pF MHz Marking Type Number hFE 2PD602AQ XQ 2PD602AR XR 2PD602AS XS 2 www.kexin.com.cn