SMD S MD Type
PNP Transistor 2SA1015
Transistors IC
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -50 -50 -5 150 200 125 -55 to 125 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Ic= -100 Testconditons A, IE=0 Min -50 -50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz Typ Max Unit V V V A A A
Ic= -0.1mA, IB=0 IE= -100 A, IC=0
VCB=-50V , IE=0 VCE= -50V , IB=0 VEB=- 5V , IC=0 VCE=-6V, IC= -2mA IC=-100 mA, IB= -10mA IC=-100 mA, IB= -10mA VCE=-10V, IC= -1mA,f=30MHz
hFE Classification
Marking Rank hFE 130 L 200 200 BA H 400
+0.1 0.38-0.1
0-0.1
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