2SA1022

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SA1022 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High transition frequency fT. insertion through the tape packing and the magazine packing. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -30 -20 -5 -30 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance Symbol ICBO ICEO IEBO hFE Testconditons VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VEB = -5.0 V, IC = 0 VCE = -10 V, IC = -1 mA 70 -0.1 -0.7 150 300 2.8 22 1.2 Min Typ Max -0.1 -100 -10 220 V V MHz dB Ù pF Unit ìA ìA ìA VCE(sat) IC = -10 mA, IB = -1 mA VBE fT NF Zrb Cre VCE =-10 V, IC = -1 mA VCB = -10 V, IE = 1 mA f = 200 MHz VCB = -10 V, IE = 1 mA f = 5 MHz VCB = -10 V, IE = 1 mA f = 2 MHz VCE = -10 V, Ic = -1 mA f = 10.7 MHz hFE Classification Marking hFE EB 70 140 EC 110 220 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1