2SA1035

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SA1035 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.55 High forward current transfer ratio hFE. +0.1 1.3-0.1 Low noise voltage NV. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -55 -55 -5 -50 -100 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base-emitter voltage * Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage * Transition frequency Noise voltage * Pulse measurement. Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE Testconditons IC = -10 ìA, IE = 0 IC = -2 mA, IB = 0 IE = -10 ìA, IC = 0 VCE = -1 V, IC = -100 mA VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 VCE = -5 V, IC = -2 mA 180 Min -55 -55 -5 -0.7 -1.0 -0.1 -1 700 -0.6 200 150 V MHz mV Typ Max Unit V V V V ìA ìA VCE(sat) IC = -100 mA, IB = -10 mA fT NV VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 kÙ, Function = FLAT hFE Classification Marking hFE HR 180 360 HS 260 520 HT 360 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1