2SA1036K

S MD Type Medium Power Transistor 2SA1036K SOT-23 Transistors Unit: mm Features Large IC. ICMax. = -500mA +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 Low VCE(sat). Ideal for low-voltage operation. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current * Collector power dissipation Junction temperature Storage temperature * PC max. must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.5 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO IC = -100 ìA IC = -1 mA IE = -100 ìA VCB = -20 V VEB = -4 V Testconditons Min -40 -32 -5 -1 -1 -0.4 82 7 200 390 pF MHz Typ Max Unit V V V A A V VCE(sat) IC = -100 mA, IB = -10 mA hFE Cob fT VCE = -3 V, IC = -10mA VCB = -10 V, IE = 0A, f = 1MHz VCE = -5 V, IE = 20 mA, f = 100MHz hFE Classification Marking Rank hFE 82 HP P 180 120 HQ Q 270 180 HR R 390 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1