2SA1037AK

S MD Type General Purpose Transistor 2SA1037AK SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 PNP silicon transistor +0.1 1.3-0.1 Excellent hFE linearity. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -6 -0.15 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current Gain Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO IC=-50 IC=-1mA IE=-50ìA VCB=-60V VEB=-6V A Testconditons Min -60 -50 -6 -0.1 -0.1 -0.5 120 4.0 140 560 5.0 pF MHz Typ Max Unit V V V A A V VCE(sat) IC/IB=-50mA/-5mA hFE Cob fT VCE=-6V, IC=-1mA VCB=-12V, IE=0A, f=1MHz VCE=-12V, IE=2mA, f=30MHz hFE Classification Marking Rank hFE 120 FQ Q 270 180 FR R 390 270 FS S 560 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1037AK Typical Characteristics Transistors 2 www.kexin.com.cn