2SA1121

SMD S MD Type Silicon PNP Epitaxial 2SA1121 SOT-23 Transistors IC Unit: mm Features Low frequency amplifier +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -35 -35 -4 -500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Base to emitter voltage Symbol Testconditons Min -35 -35 -4 -0.5 -0.2 60 -0.64 -0.6 320 V Typ Max Unit V V V ìA V V(BR)CBO IC = -10 mA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 mA, IC = 0 ICBO VCB = -20 V, IE = 0 VCE(sat) IC = -150 mA, IB = -15 mA hFE VBE VCE = -3 V, IC = -10 mA VCE = -3 V, IC = -10 mA hFE Classification Marking hFE SB 60 120 SC 100 200 SD 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1