2SA1162

S MD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Transistors Features High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise: NF = 1dB (typ.), 10dB (max) Small package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -150 -30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Noise figure Transition frequency Symbol ICBO IEBO hFE Testconditons VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA 70 -0.1 4 1.0 80 Min Typ Max -0.1 -0.1 400 -0.3 7 10 V pF dB MHz Unit A A VCE (sat) IC = -100 mA, IB = -10 mA Cob NF fT VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 k VCE = -10 V, IC = -1 mA hFE Classification Marking Rank hFE 70 SO O 140 120 SY Y 240 SR GR 200 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1162 Transistors Fig.1 Collector emitter voltage Fig.2 Collector current Fig.3 Collector current Fig.5 Base emitter voltage Fig.4 Collector current Fig.6 Colleector current Fig.7 Ambient temperature 2 www.kexin.com.cn