2SA1163

S MD Type Silicon PNP Epitaxial Type 2SA1163 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm High voltage. +0.1 2.4-0.1 Small package. High hFE. Low noise. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -120 -120 -5 -100 -20 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE Testconditons VCB = -120 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA 200 Min Typ Max -0.1 -0.1 700 -0.3 100 4 1.0 10 V MHz pF dB Unit ìA ìA VCE (sat) IC = -10 mA, IB = -1 mA fT Cob NF VCE = -6 V, IC = -1 mA VCB = -10 V, IE = 0, f = 1 MHz VCB=-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 kÙ hFE Classification Marking Rank hFE CG GR 200 400 CL BL 350 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1