2SA1182

S MD Type Silicon PNP Epitaxial 2SA1182 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features SOT-23 package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -500 -50 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol ICBO IEBO hFE Testconditons VCB = -35 V, IE = 0 VEB = -5 V, IC = 0 VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -400 mA VCE (sat) IC = -100 mA, IB = -10 mA VBE Cob fT VCE = -1 V, IC = -100 mA VCB = -6 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -20 mA 70 25 -0.1 -0.8 13 200 -0.25 -1.0 V V pF MHz Min Typ Max -0.1 -0.1 240 Unit A A hFE Classification Marking Rank hFE ZO O 70 140 ZY Y 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1182 Typical Characteristics Transistors Fig.2 Collector Current Fig. 1 Collector Emitter Voltage Fig.3 Collector Current Fig.4 Ambient Temperature Fig.5 Base Emitter Voltage 2 www.kexin.com.cn