2SA1213

S MD Type Power Switching Applications 2SA1213 Transistors Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic substrate (250 mm x 0.8 t) 2 Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating -50 -50 -5 -2 -0.4 500 1000 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -50V , IE = 0 VEB = -5V , IC = 0 -50 70 20 -0.5 -1.2 120 40 0.1 See Test Circuit. 1.0 0.1 ìs V V MHz pF 240 Min Typ Max -0.1 -0.1 Unit ìA ìA V V(BR)CEO IC = -10mA , IB = 0 hFE VCE = -2V , IC = -0.5A VCE = -2V , IC = -2.0A VCE(sat) IC = -1A , IB = -0.05A VBE(sat) IC = -1A , IB = -0.05A fT Cob ton tstg tf VCE = -2V , IC = -0.5A VCB = -10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 SMD Type 2SA1213 Test Circuit Transistors hFE Classification Marking Rank hFE 70 O 140 120 N Y 240 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SA1213 Transistors www.kexin.com.cn 3