2SA1226

SMD S MD Type Silicon Transistor 2SA1226 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High gain bandwidth product Low output capacitance Low noise +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (RBE = Collector-emitter voltage Emitter-base voltage Collector current - continuous Total power dissipation at 25 Jumction temperature Storage temperature ambient temperature ) Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -40 -40 -5.0 -30 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter vVoltage Gain bandwidth product Output capacitance Noise figure Symbol ICBO IEBO hFE Testconditons VCB = -40V , IE = 0 VEB = -4.0V , IC = 0 VCE = -10V , IC = -1.0mA 40 90 -0.09 -0.67 -0.72 250 400 1.1 3.5 2.0 Min Typ Max -0.1 -0.1 180 -0.3 V V MHz pF dB Unit ìA ìA VCE(sat) IC = -10mA , IB = -1.0mA VBE fT Cob NF VCE = -10V, IC = -10mA VCE = -10V , IE = 1.0mA VCB = -10V , IE = 0 , f = 1.0MHz VCE = -10V, IC = -1.0mA, RG = 500Ù, f = 1.0MHz hFE Classification Marking hFE E2 40 80 E3 60 120 E4 90 180 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1