2SA1235

SMD S MD Type Silicon PNP Epitaxial 2SA1235 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Excelent lineary DC forward current gain. Super mini package for easy mounting. 0.55 Small collector to emitter saturation voltage. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation (Ta=25 ) Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -50 -50 -6 -200 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Current gain bandwidth product Collector output capacitance Noise figure Symbol Testconditons Min -50 -0.1 -0.1 150 800 -0.3 200 4.0 20 V MHz pF dB Typ Max Unit V ìA ìA V(BR)CEO IC = -100ìA , RBE = ICBO IEBO hFE ICB = -50V , IE = 0 VEB = -6V , IC = 0 VCE = -6V , IC = -1mA VCE(sat) IC = -100mA , IB = -10mA fT Cob NF VCE = -6V , IE = 10mA VCB = -6V , IE = 0 , f = 1MHz VCB = -6V , IE = 0.3mA , f = 100Hz , RG = 10KÙ hFE Classification Marking hFE ME 150 300 MF 250 500 MG 400 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1