2SA1245

SMD S MD Type Silicon Pnp Epitaxial Planar Type 2SA1245 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -8 -2 -30 -15 150 125 -55 to 125 Unit V V V mA mA Mw Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reserve Transfer Capacitance Transition Frequency Insertion Gain Symbol ICBO IEBO hFE Cob Cre Ft |S2le| (1) 2 Testconditons VCB=-5V;IE=0 VEB=-1V;IC=0 VCE=-5V;IC=-10mA VCB=-5V;IE=0;f=1MHz VCE=-5V;IC=-10mA VCE=-5V;IC=-10mA;f=500MHz Min Typ +0.1 0.38-0.1 0-0.1 Max -0.1 -0.1 Unit ìA ìA 20 0.75 0.60 4 14 9.5 2.5 3.0 pF pF GHz dB dB dB dB 2 |S2le| (2) VCE=-5V;IC=-10mA;f=1GHz Noise Figure NF(1) NF(2) VCE=-5V;IC=-3mA;f=500MHz VCE=-5V;IC=-3mA;f=1GHz Marking Marking MD www.kexin.com.cn 1