2SA1256

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1256 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -30 -20 -5 -30 150 125 -55 to +125 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Reverse transfer capacitace Base-collector time constant Noise figure Voltage gain Symbol IcBO IEBO hFE fT Cre rbb,Cc NF PG Testconditons VCB = -10V , IE = 0 VEB = -4V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA VCB = -6V , f = 1MHz VCE = -6V , IC = -1mA , f = 31.9MHz VCE = -6V , IC = -1mA , f = 100MHz VCE = -6V , IC = -1mA , f = 100MHz 60 150 230 1.1 11 2.5 22 1.7 20 Min Typ Max -0.1 -0.1 270 MHz pF ps dB dB Unit ìA ìA hFE Classification Marking hFE 60 E3 120 E4 90 180 E5 135 180 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1