2SA1298

SMD S MD Type Silicon PNP Epitaxial 2SA1298 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 (IC =-500 mA, IB =-20 mA) Suitable for driver stage of small motor Small package 0.55 Low saturation voltage: VCE(sat) = -0.4V(max) +0.1 1.3-0.1 High DC current gain: hFE = 100 320 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -30 -25 -5 -800 -160 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO Testconditons VCB = -30 V, IE = 0 VEB = -50 V, IC = 0 -25 -5 100 320 -0.4 -0.5 120 13 -0.8 V V MHz pF Min Typ Max -0.1 -0.1 Unit ìA ìA V V V(BR) CEO IC = -10 mA, IB = 0 V(BR) EBO IE = -0.1 mA, IC = 0 hFE VCE = -1 V, IC = -100 mA VCE (sat) IC = -500 mA, IB = -20 mA VBE fT Cob VCE = -1 V, IC = -10 mA VCE = -5 V, IC = -10 mA VCB = -10 V, IE = 0, f = 1 MHz hFE Classification Marking hFE IO 100 200 160 IY 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1