2SA1312

S MD Type Silicon PNP Epitaxial Type 2SA1312 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE. Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltage. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -120 -120 -5 -100 -20 150 125 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter saturation voltage Gain bandwidth product Output capacitance Noise figure Symbol IcBO IEBO hFE Testconditons VCB = -120V , IE = 0 VEB = -5V , IC = 0 VCE = -6V , IC = -2mA 200 Min Typ Max -0.1 -0.1 700 -0.3 100 4 0.5 0.2 6 3 V MHz pF dB dB Unit ìA ìA VCE(sat) IC = -10mA , IB =-1mA fT Cob NF NF VCE = -6V , IC = -1mA VCB = -10V , f = 1MHz VCE =-6 V, IC=-0.1 mA, f=100 Hz,Rg=10 KÙ VCE =-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 KÙ hFE Classification Marking Rank hFE ABG GR 200 400 ABL BL 350 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1