2SA1313

SMD S MD Type Silicon PNP Epitaxial 2SA1313 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High voltage: VCEO = -50 V (min) Small package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -500 -50 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE Testconditons VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -1 V, IC = -100 mA 70 -0.1 -0.8 200 13 Min Typ Max -0.1 -0.1 240 -0.25 -1 V V MHz pF Unit ìA ìA VCE (sat) IC = -100 mA, IB = -10 mA VBE fT Cob VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -20 mA VCB = -6 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE 70 O 140 120 AC Y 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1