2SA1330

S MD Type PNP Silicon Epitaxial Transistor 2SA1330 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High voltage. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current gain. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -200 -200 -5 -100 200 150 -55 to +150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1330 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE VBE Testconditons VCB = -200V, IE=0 VEB = -5V, IC=0 VCE = -10V , IC = -10mA VCE = -10V , IC = -50mA VCE = -10V , IC = -10mA Transistors Min Typ Max -100 -100 Unit nA nA 90 50 -0.6 200 195 -0.65 -0.21 -0.8 120 3.6 0.16 1.3 0.18 450 -0.7 -0.3 -1.2 V V V MHz pF ìs ìs ìs VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA fT Cob ton tstg tf VCE = -10V , IE = 10mA VCB = -30V , IE = 0 , f = 1.0MHz IC = -10mA, IB1 = -IB2 = -1mA, VCC = -10 V VBE(off) = 2.5V hFE Classification Marking hFE O5 90 180 O6 135 270 O7 200 450 2 www.kexin.com.cn