2SA1331

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1331 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -60 -50 -5 -150 -400 -40 150 125 -55 to +125 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1331 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Delay time Rise time Storage time Fall time tf Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA VCB = -6V , f = 1MHz Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA 90 100 3.5 -0.1 -0.75 -60 -50 -5 40 120 190 200 400 MHz pF -0.4 -1.1 V V V V V ns ns ns ns VCE(sat) IC = -10mA , IB =-1mA VBE(sat) IC = -10mA , IB =-1mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO td tr tstg IE = -10ìA , IC = 0 hFE Classification Marking Rank hFE 90 4 180 O 5 135 270 6 200 400 2 www.kexin.com.cn