2SA1365

SMD S MD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Transistors IC Unit: mm Features Low collector to emitter saturation voltage. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Super mini package for easy mounting. 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Excellent linearity nof DC forward current gain. High collector current. High gain band width product. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICM IC PC Tj Tstg Rating -25 -20 -4 -1 -700 150 125 -55 to +125 Unit V V V A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain ( * ) Collector-emitter saturation voltage Gain band width product * It shows hFE classification in right table. Symbol Testconditons Min -25 -20 -4 -1 -1 150 -0.2 180 800 -0.5 V MHz Typ Max Unit V V V ìA ìA V (BR) CBO IC = -10 ìA, IE = 0 V (BR) CEO IC = -100 ìA,RBE = V (BR) EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCE fT VCB = -25 V, IE = 0 VEB = -2 V, IC = 0 VCE = -4 V, IC = -100 mA IC = -500 mA, IB = -25 mA VCE = -6 V, IE = 10 mA hFE Classification Marking hFE AE 150 300 AF 250 500 AG 400 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1