S MD Type
Plunger Drive Applications 2SA1369
Transistors
Features
High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector Power Dissipation Jumction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC ICM PC Tj Tstg Rating -30 -20 -6 -1.5 -3 500 +150 -55 to +150 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO Testconditons VCB = -20V , IE = 0 VEB = -2V , IC = 0 -20 -30 -6 400 -0.25 90 37 1200 -0.5 V MHz pF Min Typ Max -0.1 -0.1 Unit ìA ìA V V V
V(BR)CEO IC = -1mA , RBE = V(BR)CBO IC = -10ìA , IE = 0 V(BR)EBO IE = -10ìA , IC = 0 hFE VCE = -6V , IC = -500mA
VCE(sat) IC = -1A , IB = -20mA fT Cob VCE = -10V , IE = 10mA VCB = -10V , IE = 0 , f = 1MHz
hFE Classification
Marking Rank hFE 400 G 800 600 G H 1200
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SMD Type
2SA1369
Electrical Characteristics Curves
Transistors
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SMD Type
2SA1369
Transistors
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