2SA1385-Z

S MD Type Silicon PNP Epitaxia 2SA1385-Z Transistors TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Low VCE(sat):VCE(sat)=-0.18 V TYP. +0.2 9.70 -0.2 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Total power dissipation Junction temperature Storage temperature * PW 10ms, duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating -60 -60 -7 -5 -7 10 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Turn-on time Storage time Fall time * PW 350ìs, duty cycle 2%. Symbol ICBO IEBO hFE Testconditons VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 VCE = -1 V, IC = -2 A 100 200 -0.18 Min Typ Max -10 -10 400 -0.3 -1.2 140 0.08 IC = -2 A,IB1 =-IB2 = -0.2 A, RL=50Ù, VCC=-10V 0.55 0.18 1.0 2.5 1.0 V V MHz ìs ìs ìs Unit ìA ìA VCE(sat) IC = -2 A, IB = -0.2 A VBE(sat) IC = -2 A, IB = -0.2 A fT ton tstg tf VCE = -10 V, IC = -0.5 A hFE Classification Marking hFE 100 M 200 160 L 320 200 K 400 3 .8 0 www.kexin.com.cn 1