2SA1400-Z

S MD Type Silicon Transistor 2SA1400-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) *1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature *1 pw 300ìs,Duty Cycle 10% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm ) *2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -400 -400 -7 -0.5 -1 2 150 -55 to 150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Collector Saturation Voltage * Base Saturation Voltage * Turn-on Time Storage Time Fall time * PW 350ìs,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) VBE(sat) ton tstg tf Testconditons VCB=-400V,IE=0 VEB=-5V,IC=0 VCE=-5V,IC=-50mA IC=-100mA,IB=-10mA IC=-100mA,IB=-10mA IC=-100mA,RL=1.5KÙ IB1=-IB2=-10mA,VCC=-150V PW 50ìs,Duty Cycle 2% 30 Min Typ Max -100 -10 200 -1 -1.2 1 5 1 ìs V V Unit ìA V hFE Classification Marking hFE N 30 to 60 M 40 to 80 L 60 to 120 K 100 to 200 3 .8 0 High speed:tr 1.0ìs www.kexin.com.cn 1